SiZF4800LDT - Dual N-Channel MOSFET

Vishay

Datasheet Details

TrenchFET® Gen IV power MOSFET.
Symmetric dual n-channel.
Flip chip technology optimal thermal design.
High side and low side MOSFETs form optimized combination for 50 % duty cycle.
Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 SiZF4800LDT Similar Datasheet

Other Datasheets by Vishay

Published: Aug 1, 2023 |