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SiZF4800LDT - Dual N-Channel MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Symmetric dual n-channel.
  • Flip chip technology optimal thermal design.
  • High side and low side MOSFETs form optimized combination for 50 % duty cycle.
  • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Full PDF Text Transcription

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www.vishay.com SiZF4800LDT Vishay Siliconix Dual N-Channel 80 V (D-S) MOSFET 3.3 mm PowerPAIR® 3 x 3FS V+ V+ LSG 3 4 GND 2 5 1 6 V+ 1 3.3 mm Top View GND 12 11 7 8 HSG 9 SW 10 SW SW Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 80 0.019 0.0238 7.1 36 a Dual FEATURES • TrenchFET® Gen IV power MOSFET • Symmetric dual n-channel • Flip chip technology optimal thermal design • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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