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SiZF906DT - Dual N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • SkyFET® low-side MOSFET with integrated Schottky.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 Ordering Information: SiZF906DT-T1-GE3 (lead (Pb)-free and halogen-free).

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Datasheet Details

Part number SiZF906DT
Manufacturer Vishay
File Size 227.73 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiZF906DT Datasheet
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Full PDF Text Transcription

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www.vishay.com SiZF906DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.00380 at VGS = 10 V 0.00530 at VGS = 4.5 V 0.00117 at VGS = 10 V 0.00158 at VGS = 4.5 V ID (A) 60 a 60 a 60 a 60 a Qg (TYP.) 11 nC 46 nC FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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