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SiZF918DT - Dual N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • SkyFET® low side MOSFET with integrated Schottky.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZF918DT
Manufacturer Vishay
File Size 246.10 KB
Description Dual N-Channel MOSFET
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www.vishay.com SiZF918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.0040 0.0019 0.0067 0.0027 7 17.3 40 60 Dual FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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