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SiZF914DT - Dual N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • SkyFET® low side MOSFET with integrated Schottky.
  • G1 return/S1 pin for enhancing high side driving.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZF914DT
Manufacturer Vishay
File Size 328.02 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SiZF914DT Datasheet
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Full PDF Text Transcription

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www.vishay.com SiZF914DT Vishay Siliconix Dual N-Channel 25 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low side MOSFET with integrated Schottky • G1 return/S1 pin for enhancing high side driving • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 25 25 0.00380 0.00090 0.00620 0.00150 6.
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