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SiZF640DT - Symmetric Dual N-Channel MOSFET

Datasheet Summary

Features

  • TrenchFET® Gen IV power MOSFET.
  • 100 % Rg and UIS tested.
  • Symmetric dual N-channel.
  • Flip chip technology optimal thermal design.
  • High side and low side MOSFETs form optimized combination for 50 % duty cycle.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiZF640DT
Manufacturer Vishay
File Size 197.91 KB
Description Symmetric Dual N-Channel MOSFET
Datasheet download datasheet SiZF640DT Datasheet
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Full PDF Text Transcription

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www.vishay.com SiZF640DT Vishay Siliconix Symmetric Dual N-Channel 40 V (D-S) MOSFET PowerPAIR® 6 x 5FS G2 - D2 S1 -D2 S1 -D2 S1 6 mm 1 5 mm Top View 8 7 6 5 S2 (Pin 9) D1 1 4 3 2 G1 GR D1 D1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 40 0.00137 0.00240 30 159 Dual FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Symmetric dual N-channel • Flip chip technology optimal thermal design • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Material categorization: for definitions of compliance please see www.vishay.
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