SiR626DP - N-Channel MOSFET

Vishay

Key Features

TrenchFET® Gen IV power MOSFET.
Very low RDS - Qg figure-of-merit (FOM).
Tuned for the lowest RDS - Qoss FOM.
100 % Rg and UIS tested.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

SiR626DP n-channel mosfet by Vishay - Datasheet Preview

Datasheet Details

Part number	SiR626DP
Manufacturer	Vishay
File Size	407.19 KB
Description	N-Channel MOSFET
Datasheet	SiR626DP Datasheet

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Full PDF Text Transcription (Reference)

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www.vishay.com SiR626DP Vishay Siliconix N-Channel 60 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 7.5 V RDS(on) max. () at VGS = 6 V Qg typ. (nC) ID (A) Configuration 1 2S 3S 4S G Bottom View 60 0.0017 0.0020 0.0026 52 100 a, g Single FEATURES • TrenchFET® Gen IV power MOSFET • Very low RDS - Qg figure-of-merit (FOM) • Tuned for the lowest RDS - Qoss FOM • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.