UJ3N120035K3S jfet equivalent, jfet.
w Typical on-resistance RDS(on),typ of 35mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low ga.
w Over current protection circuits w DC-AC inverters w Switch mode power supplies w Power factor correction modules w Mo.
United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteris.
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