w Typical on-resistance RDS(on),typ of 70mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low ga.

w Over current protection circuits w DC-AC inverters w Switch mode power supplies w Power factor correction modules w Mo.

United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteris.

UJ3N120035K3S

UJ3N1701K2

UJ3N065025K3S

UJ3N065080K3S

UJ3C065030B3

UJ3C065030K3S

UJ3C065080B3

UJ3C065080K3S

UJ3C065080T3S

UJ3C120080K3S

UJ3C120150K3S

UJ3D06504TS

UJ3D06506TS

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