S (3) w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w .

w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction h.

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “dr.

UJ3C065030B3

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UJ3C120080K3S

UJ3C120150K3S

UJ3D06504TS

UJ3D06506TS

UJ3D06510TS

UJ3D06512TS

UJ3D06516TS

UJ3D06520KSD

UJ3D06520TS

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