UJ3C120080K3S mosfet equivalent, mosfet.
S (3)
Marking UJ3C120080K3S
w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low in.
w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “dr.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 579.86KB)