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UJ3C120150K3S - MOSFET

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

  • w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical.

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Datasheet Details

Part number UJ3C120150K3S
Manufacturer UnitedSiC
File Size 413.56 KB
Description MOSFET
Datasheet download datasheet UJ3C120150K3S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UJ3C120150K3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UJ3C120150K3S Package TO-247-3L Marking UJ3C120150K3S 1200V-150mW SiC FET Rev. C, December 2019 Description This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.