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UJ3C120070K4S - Silicon Carbide Cascode JFET

General Description

The UJ3C120070K4S is a 1200V, 70mW G3 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • w On-resistance RDS(on): 70mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 113nC w Low body diode VFSD: 1.41V w Low gate charge: QG = 46nC w Threshold voltage VG(th): 5.0V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w TO-247-4L package for faster switching, clean gate waveforms Typical.

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Datasheet Details

Part number UJ3C120070K4S
Manufacturer UnitedSiC
File Size 651.02 KB
Description Silicon Carbide Cascode JFET
Datasheet download datasheet UJ3C120070K4S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UJ3C120070K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 70 mohm Rev. B, January 2025 Description The UJ3C120070K4S is a 1200V, 70mW G3 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.