8N60 mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 1.2Ω@VGS = 10 V * Ultra low gate charge ( typical 28 nC ) * Low reverse transfer capacitance ( CRSS = typical 12.0 pF ) * Fast switching capability * Avalanch.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usuall.
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