8N60-CBQ mosfet equivalent, n-channel mosfet.
* RDS(ON) ≤ 1.1Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
1 TO-220
1
11 TO-220F1
*.
in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 8N60-CBQ is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is us.
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