8N60-E mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 1.4Ω@VGS = 10 V * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET
* ORDERI.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 8N60-E is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usua.
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