8N60-MH mosfet equivalent, n-channel power mosfet.
* RDS(ON) ≤ 1.15 Ω @ VGS=10V, ID=4.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
1 TO-251
1 TO-252
.
of switching power supplies and adaptors.
TO-220F
TO-220F1
1 TO-220F2
* FEATURES
* RDS(ON) ≤ 1.15 Ω @ VGS=10V, I.
The UTC 8N60-MH is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET.
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