6N60-P mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
* SYMBOL
11
TO-220
TO-220.
in switching power supplies and adaptors.
* FEATURES
* RDS(ON) < 1.75Ω @ VGS = 10V, ID = 3A * Fast switching capabil.
The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at.
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