6N60 mosfet equivalent, 600v n-channel power mosfet.
* RDS(ON) < 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20 nC ) * Low reverse transfer Capacitance ( CRSS = typical 10pF ) * Fast switching capability * Avalanche en.
in switching power supplies and adaptors.
* FEATURES
* RDS(ON) < 1.5Ω @VGS = 10V * Ultra low gate charge (typical 20.
The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at h.
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