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6N60 - N-Channel Mosfet Transistor

Features

  • Drain Current.
  • ID= 6A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max).
  • Avalanche Energy Specified.
  • Fast Switching.
  • Simple Drive Requirements.

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 125 W Tj Max.
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