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6N60 - N-Channel Power MOSFET

Description

The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max.

threshold voltage of 4 volts.

Features

  • RDS(ON) = 1.5Ω@VGS = 10V Ultra low gate charge(25nC max. ) Low reverse transfer capacitance (CRSS = 10pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-251 (I-PAK) (6N60F) D D G S TO-252 (D-PAK) (6N60G) GDS TO-220AB (6N60A) GDS TO-220F (6N60AF).

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Other Datasheets by Nell Power Semiconductor

Part Number Description
6N60A N-Channel Power MOSFET
6N60AF N-Channel Power MOSFET
6N60F N-Channel Power MOSFET
6N60G N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 1.5Ω@VGS = 10V Ultra low gate charge(25nC max.
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