4N70Z-E datasheet, mosfet equivalent, Unisonic Technologies

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Features and benefits

* RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
* SYMBOL Power MOSFET
* .

Application

in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES * RDS(ON)=.

Description

The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used a.

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