4N70-S mosfet equivalent, n-channel power mosfet.
* RDS(ON) < 3.2 Ω @VGS = 10 V, ID=2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL
1 TO-252
* O.
The UTC 4N70-S is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in p.
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