* RDS(ON) ≤ 3.0 Ω @ VGS=10V, ID=2.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness 1 1 TO-220F1 TO-220F2 1 TO-25.

of switching power supplies and adaptors.
* FEATURES * RDS(ON) ≤ 3.0 Ω @ VGS=10V, ID=2.0A * Fast switching capabilit.

The UTC 4N70-ML is a high voltage power MOSFET combines advanced planar MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET.

4N70-C

4N70-CB

4N70-E

4N70-R

4N70-S

4N70-TC4

4N70

4N70K

4N70Z-E

4N03L02

4N041R1

4N04R7

4N04R8

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