4N70-CB mosfet equivalent, n-channel mosfet.
* RDS(ON) < 3.36Ω @ VGS = 10V , ID = 2.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
* SYMBOL
Power MOSFET.
in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
* FEATURES
* RDS(ON) .
The UTC 4N70-CB is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchi.
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