UT4435 mosfet equivalent, p-channel power mosfet.
* RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-8.8A * RDS(ON) ≤ 35 mΩ @ VGS =-4.5V, ID=-6.7A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specifi.
* FEATURES
* RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-8.8A * RDS(ON) ≤ 35 mΩ @ VGS =-4.5V, ID=-6.7A * Low capacitance * Low .
The UT4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-8.
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