UT4435ZM1 Key Features
- RDS(ON) ≤ 20 mΩ @ VGS=-10V, ID=-8.8A
- RDS(ON) ≤ 35 mΩ @ VGS =-4.5V, ID=-6.7A
- Low capacitance
- Low gate charge
- Fast switching capability
- Avalanche energy specified
- SYMBOL
- ORDERING INFORMATION
- MARKING
- Part: UT4435ZM1
- Manufacturer: Unisonic Technologies (official site)
- Size: 266.89 KB
Related Unisonic Technologies Datasheets
| Part Number | Description |
|---|---|
| UT4435 | P-CHANNEL POWER MOSFET |
| UT4435-H | P-CHANNEL POWER MOSFET |
| UT4430 | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| UT4404 | N-Channel MOSFET |
| UT4404V | N-CHANNEL POWER MOSFET |
UT4435ZM1 Description
The UT4435ZM1 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.