UT4410 Datasheet | Unisonic Technologies

DESCRIPTION Power MOSFET As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications: cellular phone and notebook puter power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. - FEATURES Lead-free: UT4410L Halogen-free: UT4410G - RDS(ON) < 18mΩ @VGS = 4.5V - RDS(ON) < 12mΩ @VGS = 10 V - Ultra low gate charge ( typical 11 n C ) - Low reverse transfer capacitance ( CRSS = typical 35 p F ) - Fast switching capability - Avalanche energy specified - Improved dv/dt capability, high ruggedness - SYMBOL 2.Drain 1.Gate 3.Source - ORDERING INFORMATION Normal UT4410-S08-R UT4410-S08-T Ordering Number Lead Free Plating UT4410L-S08-R UT4410L-S08-T Halogen Free UT4410G-S08-R UT4410G-S08-T Package SOP-8 SOP-8 Packing Tape Reel Tube .unisonic..tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-238.A Free Datasheet http://../ - PIN CONFIGURATION Power MOSFET UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 5 QW-R502-238.A Free Datasheet http://../ - ABSOLUTE MAXIMUM RATINGS (TA =25℃, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 11.6 A Pulsed Drain Current IDM 46.4 A Power Dissipation PD 3.6 W ℃ Junction Temperature TJ -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. - THERMAL DATA MIN TYP MAX 60 UNIT ℃/W PARAMETER SYMBOL Junction to Ambient θJA Notes: The device mounted...