UT4410 Description
Power MOSFET As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications:.
UT4410 Key Features
- RDS(ON) < 18mΩ @VGS = 4.5V
- RDS(ON) < 12mΩ @VGS = 10 V
- Ultra low gate charge ( typical 11 nC )
- Low reverse transfer capacitance ( CRSS = typical 35 pF )
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
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