UT4410
Description
Power MOSFET As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications: cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Key Features
- RDS(ON) < 18mΩ @VGS = 4.5V * RDS(ON) < 12mΩ @VGS = 10 V * Ultra low gate charge ( typical 11 nC ) * Low reverse transfer capacitance ( CRSS = typical 35 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
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