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UT4410 - N-CHANNEL MOSFET

Description

As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology.

which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance.

Features

  • Lead-free: UT4410L Halogen-free: UT4410G.
  • RDS(ON) < 18mΩ @VGS = 4.5V.
  • RDS(ON) < 12mΩ @VGS = 10 V.
  • Ultra low gate charge ( typical 11 nC ).
  • Low reverse transfer capacitance ( CRSS = typical 35 pF ).
  • Fast switching capability.
  • Avalanche energy specified.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1.Gate 3.Source.

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Full PDF Text Transcription

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UNISONIC TECHNOLOGIES CO., LTD UT4410 N-CHANNEL 30-V (D-S) MOSFET „ DESCRIPTION Power MOSFET As advanced N-channel logic level enhancement MOSFET, the UT4410 is produced using UTC’s high cell density, DMOS trench technology. which has been specially tailored to minimize the on-resistance and maintain low gate charge for superior switching performance. These devices can be particularly suited for such low voltage applications: cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. „ FEATURES Lead-free: UT4410L Halogen-free: UT4410G * RDS(ON) < 18mΩ @VGS = 4.
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