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UT4411 - P-CHANNEL MOSFET

Description

The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for use as a load switch or in PWM applications.

Features

  • S.
  • RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A.
  • Low capacitance.
  • Optimized gate charge.
  • Fast switching capability.
  • Avalanche energy specified.
  • SYMBOL Drain Power MOSFET Gate Source.

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Other Datasheets by Unisonic Technologies

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Drain Power MOSFET Gate Source  ORDERING INFORMATION Ordering Number UT4411G-S08-R Note: Pin Assignment: G: Gate D: Drain Package SOP-8 S: Source Pin Assignment 12345678 Packing S S S G D D D D Tape Reel  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-191.
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