UT4411 mosfet equivalent, p-channel mosfet.
* RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
* SYMBOL
Drain
Power MOS.
* FEATURES
* RDS(ON) < 32mΩ @ VGS = -10 V, ID = -8 A * Low capacitance * Optimized gate charge * Fast switching cap.
The UT4411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES
* RDS(ON) < 32mΩ @ VGS = -10 V, ID .
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