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PE618DT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS Q2 30V
RDS(ON) 7mΩ @VGS = 10V
Q1 30V
16mΩ @VGS = 10V
ID 39A 23A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
39 25 50
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
12 10
Avalanche Current
IAS 23
Avalanche Energy
L = 0.1mH
EAS
26
Power Dissipation
TC = 25 °C TC = 100 °C
PD
20 8.3
Power Dissipation
TA = 25 °C TA = 70 °C
PD
2.2 1..4
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
Q1 30 ±20 23 14 32 7.3 5.8 12 7 16 6 1.
PE618DT Datasheet
