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PE618BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 6mΩ @VGS = 10V
ID 40A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current2 Pulsed Drain Current1
Tc = 25 °C Tc = 100 °C
ID IDM
40 25 100
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
12 10
Avalanche Current
IAS 30
Avalanche Energy
L =0.1mH
EAS
46
TC = 25 °C
17.8
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 1.
PE618BA Datasheet
