P261ALV Datasheet - UNIKC

P261ALV Dual P-Channel MOSFET

P261ALV Dual P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -12V 19mΩ @VGS = -4.5V ID -8.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -12 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA= 25 °C TA= 70 °C ID IDM -8.5 -6.8 -34 Avalanche Current IAS -35 Avalanche Energy L = 0.1mH EAS 61 Power Dissipation TA= 25 °C TA= 70°C PD 2 1.3 .

P261ALV Datasheet (434.93 KB)