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P2610ATG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26mΩ @VGS = 10V
ID 50A
TO-220
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy
Power Dissipation
TC = 25 °C TC = 100 °C
L = 0.3mH TC = 25 °C TC = 100 °C
VGS
ID
IDM IAS EAS
PD
±20 50 31 200 77 900 128 51
Operating Junction & Storage Temperature Range Lead Temperature ( 1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature.
P2610ATG Datasheet
