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P2610ATFG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
100V
26mΩ @VGS = 10V
31A
TO-220F
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID
31 19
IDM
130
Avalanche Current
IAS
77
Avalanche Energy
L = 0.3mH
EAS
900
Power Dissipation
TC = 25 °C
PD
50
TC = 100 °C
20
Operating Junction & Storage Temperature Range Lead Temperature ( 1/16" from case for 10 sec.
P2610ATFG Datasheet
