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P2610ASG - N-Channel MOSFET

Download the P2610ASG datasheet PDF. This datasheet also covers the P2610ASG-NIKO variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (P2610ASG-NIKO-SEM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NIKO-SEM

Part Number Description
P2610ADG N-Channel Transistor
P2610BT N-Channel Transistor
P2610BTF N-Channel Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Enhancement Mode P2610ASG Field Effect Transistor TO-263 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100 26mΩ ID 40A D G S 123 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy L = 0.1mH Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range VGS ID IDM IAS EAS PD Tj, Tstg LIMITS ±20 40 31 120 54 145 89 57 -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATING THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1limited by maximum junction temperature. 2limited by package.