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P057AAT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75V 5.8mΩ @VGS = 10V
ID 129A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
ID IDM
129 82 410
Avalanche Current
IAS 60
Avalanche Energy
L = 0.3mH
EAS
557
Power Dissipation
TC = 25 °C TC = 100 °C
PD
192 77
Operating Junction & Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.)
TJ, TSTG TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Limited by package. 2Pulse width limited by maximum junction temperature.
P057AAT Datasheet
