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P0502CEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 5mΩ @VGS = 4.5V
ID 70A
PDFN 3x3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
TC = 25 °C
70
Continuous Drain Current1,2
TC = 100 °C TA = 25 °C
ID
44 17
Pulsed Drain Current1
TA = 70 °C
IDM
13 150
Avalanche Current
IAS 58
Avalanche Energy
L = 0.1mH
EAS
173
TC = 25 °C
40
Power Dissipation
TC = 100 °C TA = 25 °C
PD
16 2.3
TA = 70 °C
1.4
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV1.
P0502CEA Datasheet
