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P0550AD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS 500V RDS(ON) 1.5Ω @VGS = 10V ID 5A
TO-252
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current2 Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation
1,2
SYMBOL VDS VGS
LIMITS 500 ±30 5 3 15 5 128 89 36 -55 to 150
UNITS V
TC = 25 ° C TC = 100 ° C
ID IDM IAS
A
L = 10mH TC = 25 ° C TC = 100 ° C
EAS PD TJ, TSTG
mJ W ° C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient
1 2
SYMBOL RqJC RqJA
TYPICAL
MAXIMUM 1.4 62.5
UNITS ° C/W
Pulse width limited by maximum junction temperature.
P0550AD Datasheet
