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P0510AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
5.5mΩ @VGS = 10V
ID 132A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±25
Continuous Drain Current2 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
132 83 350
Avalanche Current
IAS 36
Avalanche Energy
L = 1mH
EAS 648
Power Dissipation
TC = 25 °C TC = 100 °C
PD
192 77
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case
Junction-to-Ambient 1Pulse width limited by maximum junction temperature. 2Package limitation current is 111A.
P0510AT Datasheet
