XP151A13A0MR fet equivalent, power mos fet.
Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) Rds (on) = 0.15Ω ( Vgs = 2.5V )
Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 1.5V.
Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems
General Description
The XP.
The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a ga.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 84.44KB)