XP151A13A0MR-G datasheet, mosfet equivalent, Torex Semiconductor

Features and benefits

Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.14Ω@ Vgs = 2.5V : Rds(on) = 0.25Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-i.

Application

*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*PIN CO.

Description

The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a .

Image gallery