Datasheet4U Logo Datasheet4U.com

XP151A13A0MR-G - Power MOSFET

Description

The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

Features

  • Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.14Ω@ Vgs = 2.5V : Rds(on) = 0.25Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
XP151A13A0MR Power MOS FET Tuofeng Semiconductor
XP151A12A2MR Power MOS FET TOREX
XP151A12A2MR-G Power MOSFET TOREX
XP1501 Silicon NPN epitaxial planer transistor Panasonic Semiconductor
XP1502ACMT N-CHANNEL ENHANCEMENT MODE POWER MOSFET YAGEO

Other Datasheets by Torex Semiconductor

Part Number Description
XP151A11B0MR POWER MOS FET
XP151A11B0MR-G Power MOSFET
XP152A01D8MR Power MOS FET
XP152A11E5MR-G Power MOSFET
XP152A12C0MR POWER MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XP151A13A0MR-G Power MOSFET ETR1119_003 ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■APPLICATIONS ●Notebook PCs ●Cellular and portable phones ●On-board power supplies ●Li-ion battery systems ■PIN CONFIGURATION/ MARKING ■FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.14Ω@ Vgs = 2.5V : Rds(on) = 0.25Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.
Published: |