Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-.

*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*FEATU.

The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a .

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