Low on-state resistance : Rds (on) = 0.1 Ω ( Vgs = 4.5V ) Rds (on) = 0.16 Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 2..

Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP.

The XP151A12A2MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a ga.

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