TSB11N60S datasheet, mosfet equivalent, Truesemi

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datasheet Download (Size : 922.39KB)

Features and benefits

* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.38Ω
* Ultra Low Gate Charge (typ. Qg = 35nC)
* 100% avalanche tested
* Rohs Compliant D2-PAK (TO-263) Absolute.

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss,.

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