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TSB1132 - Low Frequency PNP Transistor

Key Features

  • Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1132CY Packing Tape & Reel Package SOT-89 Marking BK Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS.

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Datasheet Details

Part number TSB1132
Manufacturer Taiwan Semiconductor Company
File Size 64.95 KB
Description Low Frequency PNP Transistor
Datasheet download datasheet TSB1132 Datasheet

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Full PDF Text Transcription (Reference)

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TSB1132 Low Frequency PNP Transistor Pin assignment: 1. Base 2. Collector 3. Emitter www.DataSheet4U.com BVCEO = - 32V Ic = - 1A VCE (SAT), =- 0.15V(typ.) @Ic / Ib =- 0.5A /- 50mA Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSB1132CY Packing Tape & Reel Package SOT-89 Marking BK Structure Epitaxial planar type. PNP silicon transistor Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 10mS, Duty <= 50% 2. When mounted on a 40 x 40 x 0.