TSB10N60M mosfet equivalent, n-channel mosfet.
- 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
D D
D2-.
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 288.55KB)