TSB1184A Datasheet | Taiwan Semiconductor

Features — Low VCE (SAT). Ordering Information Part No. TSB1184ACP Packing Tape & Reel Package TO-252 — Excellent DC current gain characteristics Structure — Epitaxial planar type. — PNP silicon transistor Absolute Maximum Rating (Ta = 25 o C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2m S DC Pulse TO-252 PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit - 50V - 50V -6 -3 - 7 (note 1) 1.0 +150 - 55 to +150 Unit V V V A W o o Electrical Characteristics Ta = 25 o C unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = - 50u A, IE = 0 IC = - 1m A, IB = 0 IE = - 50u A, IC = 0 VCB = - 40V, IE = 0 VEB = - 4V, IC = 0 IC / IB = - 2.0A / - 0.2A VCE = - 2V, IC = - 1A VCE = - 5V, IC = - 100m A, f = 100MHz VCB = - 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) h FE f T Cob Min -...