TP65H035G4WS fet equivalent, supergan fet.
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
— Wide gate safety margin — Transient over-voltage capabil.
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDSS (V) V(TR)DSS (V) RDS(.
The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
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