TP65H050BS fet equivalent, gan fet.
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
— Intrinsic lifetime tests — Wide gate safety margin — Tra.
* Datacom
* Broad industrial
* PV inverter
* Servo motor
Key Specifications
VDSS (V) V(TR)DSS (V) RDS(.
The TP65H050BS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.
Transphorm GaN offers improved.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 1.69MB)