logo

TP65H050WS Datasheet, Transphorm

TP65H050WS fet equivalent, 650v gan fet.

TP65H050WS Avg. rating / M : 1.0 rating-12

datasheet Download

TP65H050WS Datasheet

Features and benefits


* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by — Intrinsic lifetime tests — Wide gate safety margin — Tra.

Description

The TP65H050WS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved.

Image gallery

TP65H050WS Page 1 TP65H050WS Page 2 TP65H050WS Page 3

TAGS

TP65H050WS
650V
GaN
FET
TP65H050BS
TP65H035G4WS
TP65H035WS
Transphorm

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts