SSM3J353F mosfet equivalent, silicon p-channel mosfet.
(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A).
* Power Management Switches
2. Features
(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) =.
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