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SSM3J353F Datasheet, Toshiba Semiconductor

SSM3J353F mosfet equivalent, silicon p-channel mosfet.

SSM3J353F Avg. rating / M : 1.0 rating-11

datasheet Download (359.75KB)

SSM3J353F Datasheet

Features and benefits

(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 274 mΩ (max) (@VGS = -4.0 V, ID = -0.5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.5 V, ID = -0.5 A).

Application


* Power Management Switches 2. Features (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) =.

Image gallery

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TAGS

SSM3J353F
Silicon
P-Channel
MOSFET
SSM3J351R
SSM3J352F
SSM3J355R
Toshiba Semiconductor

Manufacturer


Toshiba (https://www.toshiba.com/) Semiconductor
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